Silicon carbide device with trench gate

US11552173B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Caspar Leendertz · Munich, DE
• Thomas Basler · Riemerling, DE
• Paul Ellinghaus · Unterhaching, DE
• Rudolf Elpelt · Erlangen, DE
• Michael Hell · Erlangen, DE
• Jens Peter Konrath · Villach, AT
• Shiqin Niu · Freising, DE
• Dethard Peters · Edenkoben, DE
• Konrad Schraml · Weiling, DE
• Bernd Zippelius · Erlangen, DE

Key dates

• Filing date: Aug 6, 2020
• Grant date: Jan 10, 2023
• Expiry date: Aug 6, 2040

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02B70/10

Abstract

A silicon carbide device includes a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body. The gate structure has a gate length along a lateral first direction. A bottom surface and an active first gate sidewall of the gate structure are connected via a first bottom edge of the gate structure. The silicon carbide device further includes at least one source region of a first conductivity type. A shielding region of a second conductivity type is in contact with the first bottom edge of the gate structure across at least 20% of the gate length.