Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US11557474B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Jul 17, 2020 |
| Grant date | Jan 17, 2023 |
| Priority date | — |
| Expiry date | Sep 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a doped layer is disclosed. The doped layer may be used in a NMOS or a silicon germanium application. The doped layer may be created using an n-type halide species in a n-type dopant application, for example.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.