Bonded assembly employing metal-semiconductor bonding and metal-metal bonding and methods of forming the same
US11562975B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2021 |
| Grant date | Jan 24, 2023 |
| Priority date | — |
| Expiry date | Jul 21, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bonded assembly of a first semiconductor die and a second semiconductor die includes first and second semiconductor dies. The first semiconductor die includes first semiconductor devices, first metal interconnect structures embedded in first dielectric material layers, and first metal bonding pads laterally surrounded by a semiconductor material layer. The second semiconductor die includes second semiconductor devices, second metal interconnect structures embedded in second dielectric material layers, and second metal bonding pads that include primary metal bonding pads and auxiliary metal bonding pads. The auxiliary metal bonding pads are bonded to the semiconductor material layer through metal-semiconductor compound portions formed by reaction of surface portions of the semiconductor material layer and an auxiliary metal bonding pad. The primary metal bonding pads are bonded to the first metal bonding pads by metal-to-metal bonding.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.