Method and chamber for backside physical vapor deposition

US11572618B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Jothilingam Ramalingam · Sunnyvale, US
• Xiaozhou Che · Sunnyvale, US
• Yong Cao · Goleta, US
• Shane Lavan · Palo Alto, US
• Chunming Zhou · Milpitas, US

Key dates

• Filing date: Aug 26, 2020
• Grant date: Feb 7, 2023
• Expiry date: Aug 26, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/302
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method of depositing a backside film layer on a backside of a substrate includes loading a substrate having one or more films deposited on a front side of the substrate onto a substrate support of a processing chamber, depositing, from the sputter target, a target material on the backside of the substrate to form a backside layer on the backside of the substrate, and applying an RF bias to an electrode disposed within the substrate support while depositing the target material. The front side of the substrate faces the substrate support and is spaced from a top surface of the substrate support, and a backside of the substrate faces a sputter target of the processing chamber.