Patent · US Active

Power module comprising two substrates and method of manufacturing the same

US11574889B2 · kind B2 · utility

0Cited by

1References

12Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Ottmar Geitner · Pentling, DE
Wolfram Hable · Dresden, DE
Andreas Grassmann · Villach, AT
Frank Winter · Mühlheim, DE
Christian Neugirg · Regensburg, DE
Ivan Nikitin · Regensburg, DE

Key dates

Filing date	Jun 4, 2013
Grant date	Feb 7, 2023
Priority date	—
Expiry date	Nov 16, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manufacturing a power module comprising two substrates is provided, wherein the method comprises disposing a compensation layer of a first thickness above a first substrate; disposing a second substrate above the compensation layer; and reducing the thickness of the compensation layer from the first thickness to a second thickness after the second substrate is disposed on the compensation layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.