Vertical power semiconductor device and manufacturing method

US11575032B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Frank Pfirsch · Birkenfeld, DE
• Christian Philipp Sandow · Haar, DE
• Dorothea Werber · Munich, DE

Key dates

• Filing date: May 10, 2021
• Grant date: Feb 7, 2023
• Expiry date: Aug 5, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/23

Abstract

A vertical power semiconductor device includes a semiconductor body having opposing first and second main surfaces. At least part of a gate trench structure formed at the first main surface extends along a first lateral direction. Body and source regions directly adjoin the gate trench structure. A drift region is arranged between the body region and second main surface. A body contact structure includes first and second body contact sub-regions spaced at a first lateral distance along the first lateral direction. Each body contact sub-region directly adjoins the gate trench structure and has a larger doping concentration than the body region. In a channel region between the body contact sub-regions, the body contact structure has a second lateral distance to the gate trench structure along a second lateral direction perpendicular to the first lateral direction. The first lateral distance is equal to or less than twice the second lateral distance.