IGBT with dV/dt controllability

US11581428B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Alexander Philippou · Munich, DE
• Markus Beninger-Bina · Großhelfendorf, DE
• Matteo Dainese · Munich, DE
• Christian Jaeger · Munich, DE
• Johannes Georg Laven · Taufkirchen, DE
• Francisco Javier Santos Rodriguez · Villach, AT
• Antonio Vellei · Villach, AT
• Caspar Leendertz · Munich, DE
• Christian Philipp Sandow · Haar, DE

Key dates

• Filing date: Oct 23, 2020
• Grant date: Feb 14, 2023
• Expiry date: Oct 23, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A power semiconductor device includes an active cell region with a drift region of a first conductivity type, a plurality of IGBT cells arranged within the active cell region, each of the IGBT cells includes at least one trench that extends into the drift, an edge termination region surrounding the active cell region, a transition region arranged between the active cell region and the edge termination region, at least some of the IGBT cells are arranged within or extend into the transition region, a barrier region of a second conductivity type, the barrier region is arranged within the active cell region and in contact with at least some of the trenches of the IGBT cells and does not extend into the transition region, and a first load terminal and a second load terminal, the power semiconductor device is configured to conduct a load current along a vertical direction between.