Area selective CVD of metallic films using precursor gases and inhibitors
US11584986B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2018 |
| Grant date | Feb 21, 2023 |
| Priority date | — |
| Expiry date | Dec 3, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided herein are methods for forming a layer on a substrate wherein the layer is formed selectively on a first region of the substrate relative to a second region having a composition different than the first region. Methods of the invention include selectively forming a layer using an inhibitor agent capable of reducing the average acidity of a first region of the substrate having a composition characterized by a plurality of hydroxyl groups. Methods of the invention include selectively forming a layer by exposure of the substrate to: (i) an inhibitor agent comprising a substituted or an unsubstituted amine group, a substituted or an unsubstituted pyridyl group, a carbonyl group, or a combination of these, and (ii) a precursor gas comprising one or more ligands selected from the group consisting of a carbonyl group, an allyl group, combination thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.