Method of generating a germanium structure and optical device comprising a germanium structure

US11594654B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Andre Roeth · Dresden, DE
• Henning Feick · Dresden, DE
• Heiko Froehlich · Radebeul, DE
• Thoralf Kautzsch · Dresden, DE
• Olga Khvostikova · Dresden, DE
• Stefano Parascandola · Dresden, DE
• Thomas Popp · Rockenhausen, DE
• Maik Stegemann · Freital, DE
• Mirko Vogt · Dresden, DE

Key dates

• Filing date: Aug 30, 2021
• Grant date: Feb 28, 2023
• Expiry date: Aug 30, 2041

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of generating a germanium structure includes performing an epitaxial depositing process on an assembly of a silicon substrate and an oxide layer, wherein one or more trenches in the oxide layer expose surface portions of the silicon substrate. The epitaxial depositing process includes depositing germanium onto the assembly during a first phase, performing an etch process during a second phase following the first phase in order to remove germanium from the oxide layer, and repeating the first and second phases. A germanium crystal is grown in the trench or trenches. An optical device includes a light-incidence surface formed by a raw textured surface of a germanium structure obtained by an epitaxial depositing process without processing the surface of the germanium structure after the epitaxial process.