Two terminal spin orbit memory devices and methods of fabrication

US11594673B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Noriyuki Sato · Hillsboro, US
• Angeline Smith · Hillsboro, US
• Tanay Gosavi · Portland, US
• Sasikanth Manipatruni · Ithaca, US
• Kaan Oguz · Beaverton, US
• Kevin P. O'Brien · Cincinnati, US
• Benjamin Buford · Hillsboro, US
• Tofizur Rahman · Portland, US
• Rohan Patil · Hillsboro, US
• Nafees Kabir · Portland, US
• Michael Christenson · Beaverton, US
• Ian A. Young · Portland, US
• Hui Jae Yoo · Hillsboro, US
• Christopher J. Wiegand · Portland, US

Key dates

• Filing date: Mar 27, 2019
• Grant date: Feb 28, 2023
• Expiry date: May 21, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/10
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

A memory device includes a first electrode including a spin-orbit material, a magnetic junction on a portion of the first electrode and a first structure including a dielectric on a portion of the first electrode. The first structure has a first sidewall and a second sidewall opposite to the first sidewall. The memory device further includes a second structure on a portion of the first electrode, where the second structure has a sidewall adjacent to the second sidewall of the first structure. The memory device further includes a first conductive interconnect above and coupled with each of the magnetic junction and the second structure and a second conductive interconnect below and coupled with the first electrode, where the second conductive interconnect is laterally distant from the magnetic junction and the second structure.