Method and system of reducing charged particle beam write time
US11604451B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2021 |
| Grant date | Mar 14, 2023 |
| Priority date | — |
| Expiry date | Mar 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31793
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. The area comprises a plurality of pixels, and the original set of exposure information comprises dosages for the plurality of pixels in the area. A backscatter is calculated for a sub area of the area based on the original set of exposure information. A dosage for at least one pixel in a plurality of pixels in the sub area is increased, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area. A modified set of exposure information is output, including the increased dosage of the at least one pixel in the sub area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.