Power semiconductor switch having a cross-trench structure

US11610986B2 · kind B2 · utility

Assignees

• Infineon Technologies AG · DE
• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Matteo Dainese · Munich, DE
• Alexander Philippou · Munich, DE
• Markus Beninger-Bina · Großhelfendorf, DE
• Ingo Dirnstorfer · Eindhoven, NL
• Erich Griebl · Dorfen, DE
• Christian Jaeger · Munich, DE
• Johannes Georg Laven · Taufkirchen, DE
• Caspar Leendertz · Munich, DE
• Frank Pfirsch · Birkenfeld, DE

Key dates

• Filing date: Jun 17, 2021
• Grant date: Mar 21, 2023
• Expiry date: Jun 17, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/112

Abstract

A power semiconductor switch includes an active cell region with a drift region, an edge termination region, and IGBT cells within the active cell region. Each IGBT cell includes trenches that extend into the drift region and laterally confine mesas. At least one control trench has a control electrode for controlling the load current. At least one dummy trench has a dummy electrode electrically coupled to the control electrode. At least one further trench has a further trench electrode. At least one active mesa is electrically connected to a first load terminal within the active cell region. Each control trench is arranged adjacent to no more than one active mesa. At least one inactive mesa is adjacent to the dummy trench. A cross-trench structure merges each control trench, dummy trench and further trench to each other. The cross-trench structure overlaps at least partially along a vertical direction with the trenches.