Localized strain fields in epitaxial layer over cREO
US11611001B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2021 |
| Grant date | Mar 21, 2023 |
| Priority date | — |
| Expiry date | May 13, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/079
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A layered structure (100) for transmission of an acoustic wave, the layered structure (100) comprising: a substrate layer (102); and a second layer (104) over the substrate layer (102), wherein the second layer (104) comprises a plurality of discrete portions (105) adjacent to each other, each discrete portion (105) of the plurality of discrete portions (105) comprising a first subregion (104A) and a second subregion (104B). Also an epitaxial layer (108), grown over the second layer (104), for transmission of the acoustic wave in a major plane of the epitaxial layer (108), wherein a periodicity (λ) of a wavelength of the acoustic wave to be transmitted through the epitaxial layer (108) is approximately equal to a sum of a width (dA) of the first subregion (104A) and a width (dB) of the second subregion (104B).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.