Methods to reduce material surface roughness
US11618949B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2020 |
| Grant date | Apr 4, 2023 |
| Priority date | — |
| Expiry date | Jan 8, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32009
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the silicon-containing precursor and the boron-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the silicon-containing precursor or the boron-containing precursor is greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.