Electronic device including a charge storage component
US11621331B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2020 |
| Grant date | Apr 4, 2023 |
| Priority date | — |
| Expiry date | May 19, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A circuit and physical structure can help to counteract non-linear COSS associated with power transistors that operate at higher switching speeds and lower RDSON. In an embodiment, a component with a pn junction can be coupled to an n-channel IGFET. The component can include a p-channel IGFET, a pnp bipolar transistor, or both. A gate/capacitor electrode can be within a trench that is adjacent to the active regions of the component and n-channel IGFET, where the active regions can be within a semiconductor pillar. The combination of a conductive member and the semiconductor pillar of the component can be a charge storage component. The physical structure may include a compensation region, a barrier doped region, or both. In a particular embodiment, doped surface regions can be coupled to a buried conductive region without the use of a topside interconnect or a deep collector type of structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.