Metal etch in high aspect-ratio features
US11631589B2 · kind B2 · utility
0Cited by
5References
18Claims
0Family size
Assignee
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Key dates
| Filing date | May 4, 2021 |
| Grant date | Apr 18, 2023 |
| Priority date | — |
| Expiry date | May 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.