Under-bump-metallization structure and redistribution layer design for integrated fan-out package with integrated passive device
US11631658B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2020 |
| Grant date | Apr 18, 2023 |
| Priority date | — |
| Expiry date | Jan 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor package includes an integrated passive device (IPD) including one or more passive devices over a first substrate; and metallization layers over and electrically coupled to the one or more passive devices, where a topmost metallization layer of the metallization layers includes a first plurality of conductive patterns; and a second plurality of conductive patterns interleaved with the first plurality of conductive patterns. The IPD also includes a first under bump metallization (UBM) structure over the topmost metallization layer, where the first UBM structure includes a first plurality of conductive strips, each of the first plurality of conductive strips electrically coupled to a respective one of the first plurality of conductive patterns; and a second plurality of conductive strips interleaved with the first plurality of conductive strips, each of the second plurality of conductive strips electrically coupled to a respective one of the second plurality of conductive patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.