Semiconductor device and method for fabricating the same
US11637233B2 · kind B2 · utility
1Cited by
1References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2020 |
| Grant date | Apr 25, 2023 |
| Priority date | — |
| Expiry date | Apr 10, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
Abstract
A method for fabricating a semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) on a MRAM region of a substrate, forming a first inter-metal dielectric (IMD) layer around the MTJ, forming a patterned mask on a logic region of the substrate, performing a nitridation process to transform part of the first IMD layer to a nitride layer, forming a first metal interconnection on the logic region, forming a stop layer on the first IMD layer, forming a second IMD layer on the stop layer, and forming a second metal intercom in the second IMD layer to connect to the MTJ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.