Heterostructure and method of fabrication
US11637542B2 · kind B2 · utility
1Cited by
3References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2020 |
| Grant date | Apr 25, 2023 |
| Priority date | — |
| Expiry date | Apr 13, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.