Method of tuning film properties of metal nitride using plasma

US11646226B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Wenyi Liu · Foshan, CN
• Wei V. Tang · Santa Clara, US
• Srinivas Gandikota · Santa Clara, US
• Yixiong Yang · San Jose, US
• Yong Wu · Sunnyvale, US
• Jianqiu GUO · San Jose, US
• Arkaprava Dan · San Jose, US
• Mandyam Sriram · Beaverton, US

Key dates

• Filing date: May 11, 2020
• Grant date: May 9, 2023
• Expiry date: May 11, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76856
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.