Bonded semiconductor die assembly with metal alloy bonding pads and methods of forming the same
US11646282B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Feb 4, 2021 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | Feb 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bonded assembly includes a first semiconductor die and a second semiconductor die. The first semiconductor die includes first metallic bonding pads embedded in first dielectric material layers, the second semiconductor die includes second metallic bonding pads embedded in second dielectric material layers, the first metallic bonding pads are bonded to a respective one of the second metallic bonding pads; and each of the first metallic bonding pads includes a corrosion barrier layer containing an alloy of a primary bonding metal and at least one corrosion-suppressing element that is different from the primary bonding metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.