Bonded assembly containing low dielectric constant bonding dielectric material
US11646283B2 · kind B2 · utility
1Cited by
28References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 24, 2021 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | Jun 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06565
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first metal layer can be deposited over first dielectric material layers of a first substrate, and can be patterned into first bonding pads. A first low-k material layer can be formed over the first bonding pads. The first low-k material layer includes a low-k dielectric material such as a MOF dielectric material or organosilicate glass. A second semiconductor die including second bonding pads can be provided. The first bonding pads are bonded to the second bonding pads to form a bonded assembly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.