Method of utilizing a degassing chamber to reduce arsenic outgassing following deposition of arsenic-containing material on a substrate
US11649559B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2019 |
| Grant date | May 16, 2023 |
| Priority date | — |
| Expiry date | Feb 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67201
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.