Method for forming silicon-phosphorous materials
US11649560B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2019 |
| Grant date | May 16, 2023 |
| Priority date | — |
| Expiry date | Sep 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02576
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments generally relate to methods for depositing silicon-phosphorous materials, and more specifically, relate to using silicon-phosphorous compounds in vapor deposition processes (e.g., epitaxy, CVD, or ALD) to deposit silicon-phosphorous materials. In one or more embodiments, a method for forming a silicon-phosphorous material on a substrate is provided and includes exposing the substrate to a deposition gas containing one or more silicon-phosphorous compounds during a deposition process and depositing a film containing the silicon-phosphorous material on the substrate. The silicon-phosphorous compound has the chemical formula [(R3-vHvSi)—(R2-wHwSi)n]xPHyR′z, where each instance of R and each instance of R′ are independently an alkyl or a halogen, n is 0, 1, or 2; v is 0, 1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; z is 0, 1, or 2, and where x+y+z=3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.