Lateral bipolar junction transistors having an emitter extension and a halo region

US11652142B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Mankyu Yang · Fishkill, US
• Richard F. Taylor, III · Campbell, US
• Alexander M. Derrickson · Troy, US
• Alexander L. Martin · Saratoga Springs, US
• Jagar Singh · Clifton Park, US
• Judson R. Holt · Wappingers Falls, US
• Haiting Wang · Clifton Park, US

Key dates

• Filing date: Sep 22, 2021
• Grant date: May 16, 2023
• Expiry date: Sep 22, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/60

Abstract

A structure for a lateral bipolar junction transistor is provided. The structure comprising an emitter including a first concentration of a first dopant. A collector including a second concentration of the first dopant, the first concentration of the first dopant may be different from the second concentration of the first dopant. An intrinsic base may be laterally arranged between the emitter and the collector, and an extrinsic base region may be above the intrinsic base. An emitter extension may be arranged adjacent to the emitter, whereby the emitter extension laterally extends under a portion of the extrinsic base region. A halo region may be arranged adjacent to the emitter extension, whereby the halo region laterally extends under another portion of the extrinsic base region.