Memory cell pillar including source junction plug

US11653494B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Fatma Arzum Simsek-Ege · Boise, US
• Krishna K. Parat · Palo Alto, US
• Luan C. Tran · Meridian, US
• Meng-Wei Kuo · Boise, US
• Yushi Hu · 红钢城街道, CN

Key dates

• Filing date: Dec 23, 2019
• Grant date: May 16, 2023
• Expiry date: Dec 23, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D88/01

Abstract

Some embodiments include apparatuses and methods having a source material, a dielectric material over the source material, a select gate material over the dielectric material, a memory cell stack over the select gate material, a conductive plug located in an opening of the dielectric material and contacting a portion of the source material, and a channel material extending through the memory cell stack and the select gate material and contacting the conductive plug.