Meng-Wei Kuo
9Patents
2h-index
21Co-inventors
47Inventor score
Filing activity: May 11, 2005 → Sep 16, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7413912B2 | Microsensor with ferroelectric material and method for fabricating the same | Electricity | 7 | Expired |
| US9780102B2 | Memory cell pillar including source junction plug | Electricity | 4 | Active |
| US10672785B2 | Integrated structures of vertically-stacked memory cells | Electricity | 1 | Active |
| US10515972B2 | Memory cell pillar including source junction plug | Electricity | 1 | Active |
| US10622450B2 | Modified floating gate and dielectric layer geometry in 3D memory arrays | Electricity | 1 | Active |
| US12114500B2 | Integrated structures and methods of forming vertically-stacked memory cells | Electricity | 0 | Active |
| US11482534B2 | Integrated structures and methods of forming vertically-stacked memory cells | Electricity | 0 | Active |
| US10790290B2 | 3D NAND with integral drain-end select gate (SGD) | Electricity | 0 | Active |
| US11653494B2 | Memory cell pillar including source junction plug | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.