Chalcogen precursors for deposition of silicon nitride
US11658025B2 · kind B2 · utility
1Cited by
5References
12Claims
0Family size
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Key dates
| Filing date | Jan 18, 2021 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | Sep 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.