Field effect transistor with enhanced reliability

US11658234B2 · kind B2 · utility

Assignee

• Wolfspeed, Inc. · US

Inventors

• Kyle Bothe · Cary, US
• Terry Alcorn · Cary, US
• Dan Namishia · Wake Forest, US
• Jia Guo · Apex, US
• Matt King · Palo Alto, US
• Saptharishi Sriram · Cary, US
• Jeremy Fisher · Raleigh, US
• Fabian Radulescu · Chapel Hill, US
• Scott Sheppard · Chapel Hill, US
• Yueying Liu · Morrisville, US

Key dates

• Filing date: May 20, 2021
• Grant date: May 23, 2023
• Expiry date: Jun 13, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/411

Abstract

A transistor device includes a semiconductor epitaxial layer structure including a channel layer and a barrier layer on the channel layer, a source contact and a drain contact on the barrier layer, an insulating layer on the semiconductor layer between the source contact and the drain contact, and a gate contact on the insulating layer. The gate contact includes a central portion that extends through the insulating layer and contacts the barrier layer and a drain side wing that extends laterally from the central portion of the gate toward the drain contact by a distance ΓD. The drain side wing of the gate contact is spaced apart from the barrier layer by a distance d1 that is equal to a thickness of the insulating layer. The distance ΓD is less than about 0.3 μm, and the distance d1 is less than about 80 nm.