Multi-step high aspect ratio vertical interconnect and method of making the same
US11664321B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2022 |
| Grant date | May 30, 2023 |
| Priority date | — |
| Expiry date | Feb 1, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/96
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multi-step conductive interconnect (MSI) may comprise a first step of the MSI comprising a first end and a second end opposite the first end, a first height (Ha) and a first diameter (Da). A second step of the MSI may comprise a first end and a second end opposite the first end. The first end of the second step contacts the second end of the first step. The second step may comprise a second height (Hb) and a second diameter (Db). The MSI may comprise a height (H) and a height to width aspect ratio (H:Da) greater than or equal to 1.5:1. A sidewall of the first step may comprise an offset (O) with respect to a sidewall of the second step to form a disjointed sidewall profile. The offset O may be in a range of 0.1 μm-20 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.