Extreme ultraviolet mask blank defect reduction methods
US11669008B2 · kind B2 · utility
0Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2020 |
| Grant date | Jun 6, 2023 |
| Priority date | — |
| Expiry date | Jun 11, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K2201/061
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for the manufacture of extreme ultraviolet (EUV) mask blanks and production systems therefor are disclosed. A method for forming an EUV mask blank comprises forming a bilayer on a portion of a multi-cathode PVD chamber interior and then forming a multilayer stack of Si/Mo on a substrate in the multi-cathode PVD chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.