Method and apparatus for pattern fidelity control
US11669020B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jan 29, 2021 |
| Grant date | Jun 6, 2023 |
| Priority date | — |
| Expiry date | Jun 10, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/7026
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.