Methods of manufacture for trench-gate insulated-gate bipolar transistors (IGBTs)

US11670706B2 · kind B2 · utility

Assignee

• SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC · US

Inventors

• Meng-Chia Lee · Tyhee, US
• Ralph N. Wall · Pocatello, US
• Mingjiao Liu · Gilbert, US
• Shamsul Arefin Khan · Chandler, US
• Gordon M. Grivna · Mesa, US

Key dates

• Filing date: Jul 17, 2020
• Grant date: Jun 6, 2023
• Expiry date: Apr 10, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

In a general aspect, method of producing an insulated-gate bipolar transistor (IGBT) device can include forming a termination structure in an inactive region. The inactive region at least partial surround an active region. The method can also include forming a trench extending along a longitudinal axis in the active region. A first mesa can define a first sidewall of the trench, and a second mesa can define a second sidewall of the trench. The first mesa and the second mesa can be parallel with the trench. The method can further include forming, in at least a portion of the first mesa, an active segment of the IGBT device, and, forming, in at least a portion of the second mesa, an inactive segment of the IGBT device.