Doping semiconductor films

US11676813B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Aykut Aydin · Sunnyvale, US
• Rui Cheng · San Jose, US
• Yi Yang · New Taipei, TW
• Krishna Nittala · Sunnyvale, US
• Karthik Janakiraman · San Jose, US
• Bo Qi · San Jose, US
• Abhijit Basu Mallick · Palo Alto, US

Key dates

• Filing date: Sep 18, 2020
• Grant date: Jun 13, 2023
• Expiry date: Jan 1, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/332
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the silicon-containing precursor and the boron-containing precursor. The dopant-containing precursor may include one or more of carbon, nitrogen, oxygen, or sulfur. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The silicon-and-boron material may include greater than or about 1 at. % of a dopant from the dopant-containing precursor.