Patent · US Active

Method of making high critical temperature metal nitride layer

US11678589B2 · kind B2 · utility

1Cited by

1References

17Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Zihao Yang · Santa Clara, US
Mingwei Zhu · Sunnyvale, US
Shriram Mangipudi · Santa Clara, US
Mohammad Kamruzzaman Chowdhury · Santa Clara, US
Shane Lavan · Palo Alto, US
Zhebo Chen · San Jose, US
Yong Cao · Goleta, US
Nag B. Patibandla · Pleasanton, US

Key dates

Filing date	Feb 17, 2021
Grant date	Jun 13, 2023
Priority date	—
Expiry date	Feb 17, 2041

Classification

Technology area (CPC G)Physics
CPC primaryG01J2001/442
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.