Analog neural memory array in artificial neural network comprising logical cells and improved programming mechanism
US11682459B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2020 |
| Grant date | Jun 20, 2023 |
| Priority date | — |
| Expiry date | Dec 31, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/4013
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Two or more physical memory cells are grouped together to form a logical cell that stores one of N possible levels. Within each logical cell, the memory cells can be programmed using different mechanisms. For example, one or more of the memory cells in a logical cell can be programmed using a coarse programming mechanism, one or more of the memory cells can be programmed using a fine mechanism, and one or more of the memory cells can be programmed using a tuning mechanism. This achieves extreme programming accuracy and programming speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.