Spin orbit memory devices with dual electrodes, and methods of fabrication

US11683939B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Benjamin Buford · Hillsboro, US
• Angeline Smith · Hillsboro, US
• Noriyuki Sato · Hillsboro, US
• Tanay Gosavi · Portland, US
• Kaan Oguz · Beaverton, US
• Christopher J. Wiegand · Portland, US
• Kevin P. O'Brien · Cincinnati, US
• Tofizur Rahman · Portland, US
• Gary Allen · Portland, US
• Sasikanth Manipatruni · Ithaca, US
• Emily Walker · Santa Clara, US

Key dates

• Filing date: Apr 26, 2019
• Grant date: Jun 20, 2023
• Expiry date: Oct 18, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N52/80

Abstract

A memory apparatus includes a first electrode having a spin orbit material. The memory apparatus further includes a first memory device on a portion of the first electrode and a first dielectric adjacent to a sidewall of the first memory device. The memory apparatus further includes a second memory device on a portion of the first electrode and a second dielectric adjacent to a sidewall of the second memory device. A second electrode is on and in contact with a portion of the first electrode, where the second electrode is between the first memory device and the second memory device. The second electrode has a lower electrical resistance than an electrical resistance of the first electrode. The memory apparatus further includes a first interconnect structure and a second interconnect, each coupled with the first electrode.