Secondary imaging optical lithography method and apparatus

US11693320B2 · kind B2 · utility

Assignee

• Institute of Optics and Electronics, Chinese Academy of Sciences · CN

Inventors

• Xiangang Luo · Fremont, US
• Changtao WANG · Sichuan, CN
• Yanqin WANG · Sichuan, CN
• Weijie Kong · Sichuan, CN
• Ping Gao · Hong Kong, CN
• Zeyu Zhao · Sichuan, CN

Key dates

• Filing date: Sep 20, 2018
• Grant date: Jul 4, 2023
• Expiry date: Jan 25, 2040

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/30
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The present disclosure provides a secondary imaging optical lithography method and apparatus. The method includes: contacting a lithography mask plate with a flexible transparent transfer substrate closely, the flexible transparent transfer substrate comprising a first near-field imaging structure having a photosensitive layer; irradiating the photosensitive layer through the lithography mask plate with a first light source, so as to transfer a pattern of the lithography mask plate to the photosensitive layer; coating a device substrate for fabricating devices with a photoresist; contacting the flexible transparent transfer substrate with the photoresist-coated device substrate closely; irradiating the device substrate through the flexible transparent transfer substrate with a second light source, so as to transfer a pattern of the photosensitive layer to the photoresist of the device substrate; and developing the device substrate comprising an exposed photoresist, so as to obtain a device pattern conforming to the pattern of the lithography mask plate.