Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
US11694911B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2017 |
| Grant date | Jul 4, 2023 |
| Priority date | — |
| Expiry date | Mar 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A substrate processing system for selectively etching a substrate includes a first chamber and a second chamber. A first gas delivery system supplies an inert gas species to the first chamber. A plasma generating system generates plasma including ions and metastable species in the first chamber. A gas distribution device removes the ions from the plasma, blocks ultraviolet (UV) light generated by the plasma and delivers the metastable species to the second chamber. A substrate support is arranged below the gas distribution device to support the substrate. A second gas delivery system delivers a reactive gas species to one of the gas distribution device or a volume located below the gas distribution device. The metastable species transfer energy to the reactive gas species to selectively etch one exposed material of the substrate more than at least one other exposed material of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.