Silicon nitride etching composition and method
US11697767B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Jun 7, 2021 |
| Grant date | Jul 11, 2023 |
| Priority date | — |
| Expiry date | Jun 7, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.