Semiconductor component having a compressive strain layer and method for producing the semiconductor component having a compressive strain layer

US11705370B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Benjamin Michaelis · Regensburg, DE
• Markus Broell · Cork, IE
• Robert Walter · Parsberg, DE
• Franz Eberhard · Kilchberg, CH
• Michael Huber · Bad Abbach, DE
• Wolfgang Schmid · Regensburg, DE

Key dates

• Filing date: Jun 27, 2019
• Grant date: Jul 18, 2023
• Expiry date: Jul 27, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/83801
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.