TEM-based metrology method and system
US11710616B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Apr 18, 2022 |
| Grant date | Jul 25, 2023 |
| Priority date | — |
| Expiry date | Apr 18, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2802
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A metrology method for use in determining one or more parameters of a three-dimensional patterned structure, the method including performing a fitting procedure between measured TEM image data of the patterned structure and simulated TEM image data of the patterned structure, determining a measured Lamellae position of at least one measured TEM image in the TEM image data from a best fit condition between the measured and simulated data, and generating output data indicative of the simulated TEM image data corresponding to the best fit condition to thereby enable determination therefrom of the one or more parameters of the structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.