Non-self-aligned lateral bipolar junction transistors

US11710771B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Alexander M. Derrickson · Troy, US
• Judson R. Holt · Wappingers Falls, US
• Haiting Wang · Clifton Park, US
• Jagar Singh · Clifton Park, US
• Vibhor Jain · Williston, US

Key dates

• Filing date: Nov 11, 2021
• Grant date: Jul 25, 2023
• Expiry date: Jan 14, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/021

Abstract

Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes an emitter having a raised portion, a collector having a raised portion, and a base having a base layer and an extrinsic base layer stacked with the base layer. The base layer and the extrinsic base layer are positioned in a lateral direction between the raised portion of the emitter and the raised portion of the collector, the base layer has a first width in the lateral direction, the extrinsic base layer has a second width in the lateral direction, and the second width is greater than the first width.