Parent substrate, wafer composite and methods of manufacturing crystalline substrates and semiconductor devices

US11712749B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ralf Rieske · Dresden, DE
• Alexander Binter · Villach, AT
• Wolfgang Diewald · Fontainebleau, FR
• Bernhard Goller · Villach, AT
• Heimo Graf · Trebesing, AT
• Gerald Lackner · Arnoldstein, AT
• Jan Richter · Dresden, DE
• Roland Rupp · Achern, DE
• Guenter Schagerl · Finkenstein, AT
• Marko Swoboda · Dresden, DE

Key dates

• Filing date: Aug 6, 2020
• Grant date: Aug 1, 2023
• Expiry date: Jan 3, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/304
• WIPO field: Machine tools
• WIPO sector: Mechanical engineering

Abstract

Provided is a parent substrate that includes a central region and an edge region. The edge region surrounds the central region. A detachment layer is formed in the central region. The detachment layer extends parallel to a main surface of the parent substrate. The detachment layer includes modified substrate material. A groove is formed in the edge region. The groove laterally encloses the central region. The groove runs vertically and/or tilted to the detachment layer.