Method of ultra-fine critical dimension patterning for magnetic head devices
US11715491B2 · kind B2 · utility
1Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2021 |
| Grant date | Aug 1, 2023 |
| Priority date | — |
| Expiry date | Jun 30, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3163
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Methods of critical dimension (CD) uniformity control for magnetic head devices are disclosed. In some embodiments, a method can include providing a film stack, the film stack including a substrate, a magnetoresistive (MR) sensor layer, and a hard mask layer, patterning the hard mask layer using a first mask that defines critical shape patterns other than the CD, forming a mandrel pattern using a second mask that defines the CD, and forming a sidewall spacer pattern on sidewalls of the mandrel pattern, and removing the mandrel pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.