Scanned angled etching apparatus and techniques providing separate co-linear radicals and ions
US11715621B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2019 |
| Grant date | Aug 1, 2023 |
| Priority date | — |
| Expiry date | Apr 13, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3174
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.