Method of forming plasma processing apparatus, related apparatus, and method of forming semiconductor device using the same
US11715628B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2021 |
| Grant date | Aug 1, 2023 |
| Priority date | — |
| Expiry date | Sep 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/103
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of forming a plasma processing apparatus comprises providing a chamber, the chamber including a wall defining an interior, and a viewport extending through the wall. An analysis apparatus connected to the viewport may be formed. The analysis apparatus includes an analyzer adjacent to the chamber, a probe connected to the analyzer and aligned with the viewport, and a first window aligned with the probe, the first window having a first surface, and a second surface at an opposite side relative to the first surface, the second surface being exposed to the interior of the chamber, and the second surface of the first window has a scattering surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.