Method for etching curved substrate

US11724962B2 · kind B2 · utility

Assignee

• Institute of Optics and Electronics, Chinese Academy of Sciences · CN

Inventors

• Xiangang Luo · Fremont, US
• Xiong Li · Allen, US
• Mingbo Pu · Chengdu, CN
• Xiaoliang Ma · Port Matilda, US
• Kaipeng Liu · Izumi, JP
• Zeyu Zhao · Sichuan, CN

Key dates

• Filing date: Apr 28, 2021
• Grant date: Aug 15, 2023
• Expiry date: Apr 28, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/3341
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method for etching a curved substrate is provided, including: forming a conductive thin film layer with an etched pattern on the curved substrate; supplying power to the conductive thin film layer such that the conductive thin film layer has an equal potential at each position of the conductive thin film layer; etching each position of the curved substrate to an etching depth corresponding to the potential at each position of the conductive thin film layer based on the etched pattern of the conductive thin film layer, so as to obtain the curved substrate having a consistent etching depth at each position of the curved substrate. With the etching method, it is possible to etch an arbitrary curved surface to obtain a microstructure with a uniform processing depth.