Patent · US Active

FETS and methods of forming FETS

US11728208B2 · kind B2 · utility

1Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 10, 2021
Grant dateAug 15, 2023
Priority date
Expiry dateOct 22, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/8325
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.