Multilayer encapsulation stacks by atomic layer deposition

US11732356B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Cong Trinh · Santa Clara, US
• Mihaela Balseanu · Sunnyvale, US
• Maribel Maldonado-Garcia · San Jose, US
• Ning Li · White Plains, US
• Mark Saly · Santa Clara, US
• Bhaskar Jyoti Bhuyan · San Jose, US
• Keenan N. Woods · San Ramon, US
• Lisa J. Enman · Sunnyvale, US

Key dates

• Filing date: Jul 29, 2020
• Grant date: Aug 22, 2023
• Expiry date: Dec 4, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.